萝莉影视

The spread of smartphones has dramatically changed our lives. We can now enjoy a variety of content. In particular, large-capacity high-speed communications (streaming large volumes of images and videos), low latency (remote operation of robots, etc.), and simultaneous multiple connections (viewing live performances and watching sports events) have become possible with the improvement of antenna technology in 5G. It is expected that content will be further enhanced in 6G in the future.
Enabling communication over a broader bandwidth using higher signal frequencies is the underlying reason for this development. However, expanding the bandwidth of communication signals presents various technical challenges. On this page, we present 萝莉影视's silicon capacitor solution to address these issues.

Base stations transmit the basic signals of different frequencies within a fixed bandwidth range. In this case, Intermodulation Distortion (IMD) is generated between nearby basic signals or between basic signals and their harmonics due to the non-linearity of the amplifier.
The frequency of IMD noise is proportional to the bandwidth. Therefore, the frequency of IMD noise is also generated over a wider range as the bandwidth widens. (Fig. 1)
In particular, second-order IMD noise ranges from tens to hundreds of MHz and significantly affects the signal quality and filter design.

It is common to use MLCCs to remove second-order IMD noise in existing cases. However, it is necessary to suppress the ESL components to remove IMD noise in the high-frequency range. It is not possible to effectively remove noise due to the L components in the wiring with the existing mounting method.
Silicon capacitors can be mounted close to the FET with wire bonding. This makes it possible to greatly suppress the excess ESL components, which supports the removal of IMD noise in the range of hundreds of MHz.
In addition, 萝莉影视's silicon capacitors are stable even in high-temperature environments. Thanks to our original technology, they are made with a paraelectric material - allowing for small size and large capacity.
Moreover, we have a lineup of vertical products with thicknesses from 100 to 250 um to allow silicon capacitors to be placed even in existing PA designs.

Wire bondable series

Connecting a capacitor with a different capacity to the capacitor connected to the FET bias line causes anti-resonance. This produces a frequency range with poor filter characteristics. Accordingly, in general, a damping resistor is often used together with the capacitor to suppress anti-resonance. In this case, the number of connecting wires increases as the number of connecting components increases. This increases the parasitic inductance components in the bias line. Therefore, the high-frequency characteristics of the filter are not very good.
Accordingly, we have prepared products that integrate a capacitor and resistor using 萝莉影视's Integrated Passive Device (IPD) technology as our standard lineup.
This eliminates the parasitic inductance components in the wires and thus improves the filter characteristics in higher frequency ranges.

The standard specs of R+C silicon IPDs are as below.
Four types: 4.7 nF + 0.5 Ω with a thickness of 100 um or 250 um and 10 nF + 0.5 Ω with a thickness of 100 um or 250 um

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